ELECTRONIC-STRUCTURES OF REFRACTORY-METAL DISILICIDES IN C11B STRUCTURE

被引：18

作者：

ITOH, S

机构：

[1] Advanced Research Laboratory, TOSHIBA Research and Development Center, Kanagawa, 210, Saiwaiku, Kawasakishi

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 6卷 / 01期

关键词：

D O I：

10.1016/0921-5107(90)90112-O

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the electronic structures of the refractory metal (tantalum, tungsten and rhenium) disilicides with the same tetragonal C11b structure, based on the semi-relativistic self-consistent LMTO-ASA method. The band structures, the density of states and Fermi surfaces are calculated. The chemical trend of these disilicides is discussed. In addition, the electronic structure of TaSi2 with hexagonal C40 structure is also discussed. © 1990.

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页码：37 / 41

页数：5

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