ELECTRONIC TRANSPORT-PROPERTIES OF TUNGSTEN SILICIDE THIN-FILMS

被引：23

作者：

MARTIN, TL ^{[1
]}

MALHOTRA, V ^{[1
]}

MAHAN, JE ^{[1
]}

机构：

[1] COLORADO STATE UNIV,CONDENSED MATTER SCI LAB,FT COLLINS,CO 80523

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 02期

关键词：

D O I：

10.1007/BF02656682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：309 / 325

页数：17

共 30 条

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[9] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J].

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