PROPERTIES OF MOSI2 AND WSI2 MAGNETRON CO-SPUTTERED FROM ELEMENTAL TARGETS

[1] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[3] CROWDER BL, 1977, J ELECTROCHEM SOC, V124, pC388

[4] RESISTIVITY AND OXIDATION OF TUNGSTEN SILICIDE THIN-FILMS [J]. THIN SOLID FILMS, 1980, 72 (03) : 427 - 432

[5] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[6] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[7] NOWICKI RW, 1980, J ELECTROCHEM SOC, V127, P562

[8] STIMMEL J, COMMUNICATION

[1] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[3] CROWDER BL, 1977, J ELECTROCHEM SOC, V124, pC388

[4] RESISTIVITY AND OXIDATION OF TUNGSTEN SILICIDE THIN-FILMS [J]. THIN SOLID FILMS, 1980, 72 (03) : 427 - 432

[5] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[6] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[7] NOWICKI RW, 1980, J ELECTROCHEM SOC, V127, P562

[8] STIMMEL J, COMMUNICATION