RESISTIVITY AND OXIDATION OF TUNGSTEN SILICIDE THIN-FILMS

[1] CHOW TP, 1979, 1979 INT EL DEV M TE, P458

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[3] CROWDER BL, 1977, J ELECTROCHEM SOC, V124, pC388

[4] OXIDATION OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (09) : 826 - 827

[5] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[6] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 450 - 454

[7] KINETICS OF THE THERMAL-OXIDATION OF WSI2 [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 529 - 531

[8] MOHAMMADI F, 1979, 1979 EL SOC M PRINC, P392

[9] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356

[10] MURARKA SP, 1979, 1979 INT EL DEV M IE, P454

[1] CHOW TP, 1979, 1979 INT EL DEV M TE, P458

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[3] CROWDER BL, 1977, J ELECTROCHEM SOC, V124, pC388

[4] OXIDATION OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (09) : 826 - 827

[5] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[6] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 450 - 454

[7] KINETICS OF THE THERMAL-OXIDATION OF WSI2 [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 529 - 531

[8] MOHAMMADI F, 1979, 1979 EL SOC M PRINC, P392

[9] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356

[10] MURARKA SP, 1979, 1979 INT EL DEV M IE, P454