NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL

被引：76

作者：

MOCHIZUKI, T ^{[1
]}

SHIBATA, K ^{[1
]}

INOUE, T ^{[1
]}

OHUCHI, K ^{[1
]}

机构：

[1] TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI,KANAGAWA 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷

关键词：

D O I：

10.7567/JJAPS.17S1.37

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：37 / 42

页数：6

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