HIGH-SPEED P-CHANNEL RANDOM-ACCESS 1024-BIT MEMORY MADE WITH ELECTRON LITHOGRAPHY

被引：26

作者：

HENDERSON, RC ^{[1
]}

PEASE, RF ^{[1
]}

VOSHCHENKOV, AM ^{[1
]}

HELM, RF ^{[1
]}

WADSACK, RL ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1975年 / SC10卷 / 02期

关键词：

D O I：

10.1109/JSSC.1975.1050567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：92 / 97

页数：6

共 12 条

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[2]

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[3] HIGH-RESOLUTION POSITIVE RESISTS FOR ELECTRON-BEAM EXPOSURE [J].

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[4]

HELM RF, UNPUBLISHED WORK

[5]

MOLINE RA, 1973, IEEE T ELECTRON DEVI, VED20, P1129

[6]

MOLINE RA, 1973, IEEE T ELECTRON DEVI, VED20, P840

[7] IGFET INVERTER CIRCUITS MADE WITH ELECTRON LITHOGRAPHY [J].

PEASE, RFW ;

HENDERSON, RC ;

DALTON, JV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (06) :1078-1081

[8] ELECTROLESS GOLD BEAM LEAD PLATING [J].

SARD, R ;

OKINAKA, Y ;

WAGGENER, HA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) :62-66

[9]

SHANKOFF TA, TO BE PUBLISHED

[10]

THIBAULT LR, 1972, 5 P INT C EL ION BEA, P148

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