H2-INDUCED B DIFFUSION IN MOS DEVICES

被引:8
作者
BROWN, DM [1 ]
机构
[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301
关键词
D O I
10.1149/1.2132839
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:412 / 415
页数:4
相关论文
共 18 条
[1]   SCANNING ELECTRON-MICROSCOPE INVESTIGATION OF GLASS FLOW IN MOS INTEGRATED-CIRCUIT FABRICATION [J].
ARMSTRONG, WE ;
TOLLIVER, DL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (02) :307-310
[2]   DOPING PROFILES BY MOSFET DEEP DEPLETION C(V) [J].
BROWN, DM ;
CONNERY, RJ ;
GRAY, PV .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (01) :121-127
[3]   P-CHANNEL REFRACTORY METAL SELF-REGISTERED MOSFET [J].
BROWN, DM ;
CADY, WR ;
SPRAGUE, JW ;
SALVAGNI, PJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :931-&
[4]   REFRACTORY METAL SILICON DEVICE TECHNOLOGY [J].
BROWN, DM ;
ENGELER, WE ;
GARFINKEL, M ;
GRAY, PV .
SOLID-STATE ELECTRONICS, 1968, 11 (12) :1105-+
[5]  
CLEMENS JT, 1974, MAY EL SOC SPRING M, P125
[6]   MOLYBDENUM FILMS AS PARTIAL DIFFUSION MASKS IN MOS PROCESSING [J].
ELHOSHY, A ;
BROWN, DM ;
ENGELER, WE .
APPLIED PHYSICS LETTERS, 1970, 17 (06) :261-&
[7]  
EMMETT PH, 1955, CATALYSIS 3, P224
[8]  
FOWLER RH, 1939, STATISTICAL THERMODY
[9]   DIFFUSIVITY SUMMARY OF B, GA, P, AS, AND SB IN SIO2 [J].
GHEZZO, M ;
BROWN, DM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :146-148
[10]   REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].
GROVE, AS ;
SAH, CT ;
LEISTIKO, O .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&