H2-INDUCED B DIFFUSION IN MOS DEVICES

被引：8

作者：

BROWN, DM ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 03期

关键词：

D O I：

10.1149/1.2132839

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：412 / 415

页数：4

共 18 条

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[5]

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[6] MOLYBDENUM FILMS AS PARTIAL DIFFUSION MASKS IN MOS PROCESSING [J].

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[7]

EMMETT PH, 1955, CATALYSIS 3, P224

[8]

FOWLER RH, 1939, STATISTICAL THERMODY

[9] DIFFUSIVITY SUMMARY OF B, GA, P, AS, AND SB IN SIO2 [J].

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[10] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

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