OXIDATION OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS

[1] HIGH-TEMPERATURE OXIDATION .2. MOLYBDENUM SILICIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (06) : 583 - &

[2] EFFECT OF OXIDATION ON ANOMALOUS DIFFUSION IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1971, 24 (189): : 567 - &

[3] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1567 - 1573

[4] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[5] Shaffer, 1964, PLENUM PRESS HDB HIG

[1] HIGH-TEMPERATURE OXIDATION .2. MOLYBDENUM SILICIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (06) : 583 - &

[2] EFFECT OF OXIDATION ON ANOMALOUS DIFFUSION IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1971, 24 (189): : 567 - &

[3] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1567 - 1573

[4] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[5] Shaffer, 1964, PLENUM PRESS HDB HIG