EFFECTS OF GRAIN-BOUNDARIES ON THE RESISTIVITY OF CO-SPUTTERED WSI2 FILMS

被引：7

作者：

CAMPBELL, DR

MADER, S

CHU, WK

机构：

来源：

THIN SOLID FILMS | 1982年 / 93卷 / 3-4期

关键词：

D O I：

10.1016/0040-6090(82)90140-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：341 / 346

页数：6

相关论文

共 12 条

[1] ANGILLELO J, 1980, J ELECTRON MATER, V10, P59
[2] CROWDER BL, 1978, IEEE J SOLID STATE C, V14, P76
[3] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES
GEIPEL, HJ
HSIEH, N
ISHAQ, MH
KOBURGER, CW
WHITE, FR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424
[4] ELECTRICAL-RESISTIVITY MODEL FOR POLYCRYSTALLINE FILMS - CASE OF ARBITRARY REFLECTION AT EXTERNAL SURFACES
MAYADAS, AF
SHATZKES, M
[J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1382 - &
[5] RESISTIVITY AND OXIDATION OF TUNGSTEN SILICIDE THIN-FILMS
MILLER, RJ
[J]. THIN SOLID FILMS, 1980, 72 (03) : 427 - 432
[6] SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2
MURARKA, SP
FRASER, DB
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1593 - 1598
[7] Neshpor V.S., 1960, FIZ TVERD TELA, V2, P2202
[8] RIGGOTY J, 1979, COMMUNICATION
[9] REFRACTORY-METAL SILICIDES FOR VLSI APPLICATIONS
SINHA, AK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 778 - 785
[10] PROPERTIES OF TUNGSTEN SILICIDE FILM ON POLYCRYSTALLINE SILICON
TSAI, MY
DHEURLE, FM
PETERSSON, CS
JOHNSON, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5350 - 5355