COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES

被引：82

作者：

GEIPEL, HJ

HSIEH, N

ISHAQ, MH

KOBURGER, CW

WHITE, FR

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期

关键词：

D O I：

10.1109/T-ED.1980.20050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1417 / 1424

页数：8

相关论文

共 23 条

[1] MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS
ANTONIADIS, DA
DUTTON, RW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 490 - 500
[2] HIGH-TEMPERATURE OXIDATION .2. MOLYBDENUM SILICIDES
BERKOWIT.JB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (06) : 583 - &
[3] P-CHANNEL REFRACTORY METAL SELF-REGISTERED MOSFET
BROWN, DM
CADY, WR
SPRAGUE, JW
SALVAGNI, PJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 931 - &
[4] H2-INDUCED B DIFFUSION IN MOS DEVICES
BROWN, DM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) : 412 - 415
[5] REFRACTORY METAL SILICON DEVICE TECHNOLOGY
BROWN, DM
ENGELER, WE
GARFINKEL, M
GRAY, PV
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1105 - +
[6] BROWN DM, 1966, J ELECTROCHEM SOC, V115, P874
[7] OXIDATION OF MOLYBDENUM DISILICIDE
CHANG, YA
[J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (07) : 641 - &
[8] CHOW TP, 1979 INT EL DEV M, P458
[9] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
CROWDER, BL
ZIRINSKY, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371
[10] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
GAENSSLEN, FH
YU, HN
RIDEOUT, VL
BASSOUS, E
LEBLANC, AR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268