MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS

被引：100

作者：

ANTONIADIS, DA ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 04期

关键词：

D O I：

10.1109/T-ED.1979.19452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The structure of a complete process simulator for modeling IC technologies is described. Multiple-step sequences which include ion implantation, oxidation, diffusion, epitaxy, and etching can be simulated. Features of individual process models for each of the steps are described in detail. Special emphasis is given to extrinsic diffusion phenomena for arsenic and phosphorus including coupling to boron. The kinetics of oxidation including concentration dependence id interaction of oxide growth with impurity migration are considered as well as the segregation phenomena. The problem of segregation for moving boundary problems in general is reviewed. As example a bipolar process development using both surface deposition and implanted-phosphorus emitters is presented. Experimental results show that profile shapes, junction depths, and integrated base doping are extremely sensitive to the emitter diffusion as predicted by simulation. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：490 / 500

页数：11

共 36 条

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