BORON IN NEAR-INTRINSIC (100) AND (111) SILICON UNDER INERT AND OXIDIZING AMBIENTS-DIFFUSION AND SEGREGATION

被引：130

作者：

ANTONIADIS, DA

GONZALEZ, AG

DUTTON, RW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 05期

关键词：

D O I：

10.1149/1.2131554

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：813 / 819

页数：7

共 34 条

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ANAND, KV .

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[4]

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[5]

BULLIS WM, 1977, NBS40029 SPEC PUBL, P16

[6] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].

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THOMAS, RE .

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[7]

CHU A, 1976, 5TH P INT C ION IMPL

[8]

CLACYS CL, 1977, 3RD P INT S SIL MAT, P773

[9] BORON SEGREGATION AT SI-SIO2 INTERFACE AS A FUNCTION OF TEMPERATURE AND ORIENTATION [J].

COLBY, JW ;

KATZ, LE .

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[10]

Crowder B.L., 1973, ION IMPLANTATION SEM, P267

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