EFFECT OF OXIDATION ON ORIENTATION-DEPENDENT BORON DIFFUSION IN SILICON

被引：25

作者：

ALLEN, WG ^{[1
]}

机构：

[1] NEWCASTLE POLYTECH,DEPT PHYS & PHYS ELECTR,NEWCASTLE NE1 8ST,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1101(73)90114-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：709 / 717

页数：9

共 14 条

[1] ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON
ALLEN, WG
ANAND, KV
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (05) : 397 - &
[2] INFLUENCE OF CRYSTAL ORIENTATION ON SILICON SEMICONDUCTOR PROCESSING
BEAN, KE
GLEIM, PS
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1469 - &
[3] NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS
BENNEMAN, KH
[J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1497 - +
[4] DIFFUSION OF BORON, PHOSPHORUS, ARSENIC, AND ANTIMNY INTO (100( AND (111( SILICON SLICES
CHAN, TC
MAI, CC
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (04): : 588 - &
[5] HIGUCHI H, 1971, SPR M EL SOC, P190
[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[7] KATSUTA M, 1970, SHIN NIPPON DENKI GI, V5, P9
[8] KATZ LE, 1970, S SILICON DEVICE PRO
[9] KOVALEV RA, 1970, FIZ TVERD TELA+, V11, P1571
[10] ORIENTATION DEPENDENCE OF BORON DIFFUSION
OKAMURA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (07) : 848 - &