BORON SEGREGATION AT SI-SIO2 INTERFACE AS A FUNCTION OF TEMPERATURE AND ORIENTATION

被引:50
作者
COLBY, JW [1 ]
KATZ, LE [1 ]
机构
[1] BELL TEL LABS INC,ALLENTOWN,PA 18103
关键词
D O I
10.1149/1.2132838
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:409 / 412
页数:4
相关论文
共 26 条
[1]   EFFECT OF OXIDATION ON ORIENTATION-DEPENDENT BORON DIFFUSION IN SILICON [J].
ALLEN, WG .
SOLID-STATE ELECTRONICS, 1973, 16 (06) :709-717
[2]   ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON [J].
ALLEN, WG ;
ANAND, KV .
SOLID-STATE ELECTRONICS, 1971, 14 (05) :397-&
[3]   ANALYSIS OF THIN SILICA FILMS BY SECONDARY ION EMISSION [J].
BLANCHARD, B ;
HILLERET, N ;
MONNIER, J .
MATERIALS RESEARCH BULLETIN, 1971, 6 (12) :1283-+
[4]   APPLICATION OF IONIC MICROANALYSIS TO DETERMINATION OF BORON DEPTH PROFILES IN SILICON AND SILICA [J].
BLANCHARD, B ;
HILLERET, N ;
QUOIRIN, JB .
JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1972, 12 (01) :85-94
[6]   DIFFUSION OF BORON, PHOSPHORUS, ARSENIC, AND ANTIMNY INTO (100( AND (111( SILICON SLICES [J].
CHAN, TC ;
MAI, CC .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (04) :588-&
[7]   IMPURITY REDISTRIBUTION IN A SEMICONDUCTOR DURING THERMAL OXIDATION [J].
CHEN, WH ;
CHEN, WS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (12) :1297-&
[8]  
COLBY JW, 1975, SCANNING ELECTRON MI
[9]  
FAIR RB, 1974, OCT EL SOC M NEW YOR
[10]   REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].
GROVE, AS ;
SAH, CT ;
LEISTIKO, O .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&