PROPERTIES OF TUNGSTEN SILICIDE FILM ON POLYCRYSTALLINE SILICON

[1] TANTALUM SILICIDE FILMS DEPOSITED BY DC SPUTTERING [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 59 - 93

[2] FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 641 - 661

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[4] DEMPSEY JJ, UNPUBLISHED

[5] DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517

[6] FRISCH MA, 1980, REV SCI INSTRUM, V51, P6

[7] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424

[8] RESISTIVITY AND OXIDATION OF TUNGSTEN SILICIDE THIN-FILMS [J]. THIN SOLID FILMS, 1980, 72 (03) : 427 - 432

[9] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 450 - 454

[10] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356

[1] TANTALUM SILICIDE FILMS DEPOSITED BY DC SPUTTERING [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 59 - 93

[2] FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 641 - 661

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[4] DEMPSEY JJ, UNPUBLISHED

[5] DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517

[6] FRISCH MA, 1980, REV SCI INSTRUM, V51, P6

[7] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424

[8] RESISTIVITY AND OXIDATION OF TUNGSTEN SILICIDE THIN-FILMS [J]. THIN SOLID FILMS, 1980, 72 (03) : 427 - 432

[9] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 450 - 454

[10] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356