TANTALUM SILICIDE FILMS DEPOSITED BY DC SPUTTERING

[1] ANGILELLO J, 1980, THIN FILM INTERFACES

[2] INTERFACE-MARKER TECHNIQUE APPLIED TO THE STUDY OF METAL SILICIDE GROWTH [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 491 - 497

[3] BARTLETT RW, 1964, T METALL SOC AIME, V230, P1528

[4] DC BIAS-SPUTTERED ALUMINUM FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 299 - 302

[5] STRESS AND RESISTIVITY CONTROL IN SPUTTERED MOLYBDENUM FILMS AND COMPARISON WITH SPUTTERED GOLD [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 699 - &

[6] BLATT FJ, 1968, PHYSICS ELECTRONIC C, P114

[7] MEASUREMENT OF STRESSES IN THIN-FILMS ON SINGLE CRYSTALLINE SUBSTRATES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 46 (02): : 445 - 450

[8] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[9] DHEURLE FM, 1966, T METALL SOC AIME, V236, P321

[10] SILICON GATE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &

[1] ANGILELLO J, 1980, THIN FILM INTERFACES

[2] INTERFACE-MARKER TECHNIQUE APPLIED TO THE STUDY OF METAL SILICIDE GROWTH [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 491 - 497

[3] BARTLETT RW, 1964, T METALL SOC AIME, V230, P1528

[4] DC BIAS-SPUTTERED ALUMINUM FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 299 - 302

[5] STRESS AND RESISTIVITY CONTROL IN SPUTTERED MOLYBDENUM FILMS AND COMPARISON WITH SPUTTERED GOLD [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 699 - &

[6] BLATT FJ, 1968, PHYSICS ELECTRONIC C, P114

[7] MEASUREMENT OF STRESSES IN THIN-FILMS ON SINGLE CRYSTALLINE SUBSTRATES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 46 (02): : 445 - 450

[8] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[9] DHEURLE FM, 1966, T METALL SOC AIME, V236, P321

[10] SILICON GATE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &