MEASUREMENT OF STRESSES IN THIN-FILMS ON SINGLE CRYSTALLINE SUBSTRATES

[1] Bohg A., 1976, IBM Technical Disclosure Bulletin, V19

[2] BOHG A, 1974, IBM TECH DISCL B, V17, P1394

[3] BOHG A, 1974, IBM TECH DISCL B, V17, P2351

[4] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535

[5] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123

[6] X-RAY MEASUREMENT OF ELASTIC STRAIN AND LATTICE CONSTANT OF DIFFUSED SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (01) : 33 - &

[7] X-RAY MEASUREMENT OF ELASTIC STRAIN AND ANNEALING IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 105 - &

[8] DETERMINATION OF STRESS IN FILMS ON SINGLE CRYSTALLINE SILICON SUBSTRATES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (01) : 7 - +

[9] APPLICATION OF X-RAY TRIPLE-CRYSTAL SPECTROMETER FOR MEASURING RADIUS OF CURVATURE OF BENT SINGLE-CRYSTALS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (02): : 705 - 710

[10] MEASUREMENT OF LATTICE-PARAMETER DIFFERENCES ON SEMICONDUCTOR CRYSTALS DUE TO DIFFUSION DOPING [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (02): : K87 - &

[1] Bohg A., 1976, IBM Technical Disclosure Bulletin, V19

[2] BOHG A, 1974, IBM TECH DISCL B, V17, P1394

[3] BOHG A, 1974, IBM TECH DISCL B, V17, P2351

[4] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535

[5] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123

[6] X-RAY MEASUREMENT OF ELASTIC STRAIN AND LATTICE CONSTANT OF DIFFUSED SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (01) : 33 - &

[7] X-RAY MEASUREMENT OF ELASTIC STRAIN AND ANNEALING IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 105 - &

[8] DETERMINATION OF STRESS IN FILMS ON SINGLE CRYSTALLINE SILICON SUBSTRATES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (01) : 7 - +

[9] APPLICATION OF X-RAY TRIPLE-CRYSTAL SPECTROMETER FOR MEASURING RADIUS OF CURVATURE OF BENT SINGLE-CRYSTALS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (02): : 705 - 710

[10] MEASUREMENT OF LATTICE-PARAMETER DIFFERENCES ON SEMICONDUCTOR CRYSTALS DUE TO DIFFUSION DOPING [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (02): : K87 - &