OPTICAL CHARACTERIZATION OF TUNGSTEN SILICIDE THIN-FILMS

被引：6

作者：

DELFINO, M

LEHRER, WI

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 05期

关键词：

D O I：

10.1149/1.2127552

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1071 / 1074

页数：4

共 9 条

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J].

ARCHER, RJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) :970-&

[2] FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT [J].

BAGLIN, J ;

DEMPSEY, J ;

HAMMER, W ;

DHEURLE, F ;

PETERSSON, S ;

SERRANO, C .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) :641-661

[3] OPTICAL CONSTANTS OF (011) TUNGSTEN IN VISIBLE REGION [J].

CARROLL, JJ ;

MELMED, AJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1971, 61 (04) :470-&

[4] SOME NEW FORMULAS FOR DETERMINING THE OPTICAL CONSTANTS FROM MEASUREMENTS ON REFLECTED LIGHT [J].

DITCHBURN, RW .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1955, 45 (09) :743-748

[5]

HASHIMOT.N, 1967, T METALL SOC AIME, V239, P1109

[6]

LEBERKNICHT CE, 1939, J OPT SOC AM, V52, P59

[7] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J].

LOCKER, LD ;

CAPIO, CD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4366-4369

[8] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J].

MOHAMMADI, F ;

SARASWAT, KC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :450-454

[9] *STRUKTURUNTERSUCHUNGEN AN DISILIZIDEN [J].

NOWOTNY, H ;

KIEFFER, R ;

SCHACHNER, H .

MONATSHEFTE FUR CHEMIE, 1952, 83 (05) :1243-1252

← 1 →