REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES

被引：90

作者：

LOCKER, LD ^{[1
]}

CAPIO, CD ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.1661965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4366 / 4369

页数：4

共 9 条

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[2] BROWN R, 1969, PROGR ANALYTICAL CHE, V2
[3] CHANG CC, UNPUBLISHED
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[5] Evans U.R., 1960, EDWARD ARNOLD, DOI DOI 10.1002/MACO.19780290130
[6] HASHIMOT.N, 1967, T METALL SOC AIME, V239, P1109
[7] LOW-TEMPERATURE MIGRATION OF SILICON THROUGH METAL FILMS IMPORTANCE OF SILICON-METAL INTERFACE
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LUGUJJO, E
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MAYER, JW
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02): : 401 - &
[8] THIN FILMS DEPOSITED BY BIAS SPUTTERING
MAISSEL, LI
SCHAIBLE, PM
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 237 - &
[9] SPUTTER CLEANING AND ETCHING OF CRYSTAL SURFACES (TI,W,SI) MONITORED BY AUGER SPECTROSCOPY, ELLIPSOMETRY AND WORK FUNCTION CHANGE
SMITH, T
[J]. SURFACE SCIENCE, 1971, 27 (01) : 45 - +