RADIATION-INDUCED PRECIPITATION IN SILICON DURING HIGH-VOLTAGE ELECTRON MICROSCOPE OBSERVATION

被引：29

作者：

NES, E

WASHBURN, J

机构：

来源：

关键词：

D O I：

10.1063/1.1660770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3559 / &

共 5 条

[1]

Cosslett V. E., 1970, Modern diffraction and imaging techniques in material science, P341

[2] An Introduction to High-Voltage Electron Microscopy [J].

Makin, M. J. ;

Sharp, J. V. .

MAKIN, MJ .

PHILOSOPHICAL MAGAZINE, 1968, 18 (153) :637-&

[4]

NES E, 1971, J APPL PHYS, V42, P3572

[5] ELECTRON MICROSCOPY AT HIGH VOLTAGES [J].

THOMAS, G .

PHILOSOPHICAL MAGAZINE, 1968, 17 (150) :1097-&