ELECTRON MICROSCOPY AT HIGH VOLTAGES

[1] AYROLES R, 1967, J MICROSC-PARIS, V6, P135

[2] USEFUL PROPERTIES OF DARK-FIELD ELECTRON IMAGES [J]. PHYSICA STATUS SOLIDI, 1965, 12 (02): : 843 - &

[3] GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .2. INITIAL NUCLEATION AND GROWTH [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (109): : 11 - &

[4] COSSLETT VE, 1962, J ROY MICROSC SOC, V81, P1

[5] DUPOUY G, 1963, ANN PHYS-PARIS, V8, P251

[6] DUPOUY G, 1965, J MICROSC-PARIS, V4, P429

[7] DUPOUY G, 1962, J MICROSCOPIE, V1, P167

[8] DUPOUY G, 1964, J MICROSCOPIE, V3, P233

[9] DUPOUY G, 1964, CR HEDB SEANC ACAD S, V258, P1

[10] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 406 - &

[1] AYROLES R, 1967, J MICROSC-PARIS, V6, P135

[2] USEFUL PROPERTIES OF DARK-FIELD ELECTRON IMAGES [J]. PHYSICA STATUS SOLIDI, 1965, 12 (02): : 843 - &

[3] GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .2. INITIAL NUCLEATION AND GROWTH [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (109): : 11 - &

[4] COSSLETT VE, 1962, J ROY MICROSC SOC, V81, P1

[5] DUPOUY G, 1963, ANN PHYS-PARIS, V8, P251

[6] DUPOUY G, 1965, J MICROSC-PARIS, V4, P429

[7] DUPOUY G, 1962, J MICROSCOPIE, V1, P167

[8] DUPOUY G, 1964, J MICROSCOPIE, V3, P233

[9] DUPOUY G, 1964, CR HEDB SEANC ACAD S, V258, P1

[10] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 406 - &