ENHANCED CONDUCTANCE IN SUPERCONDUCTOR SEMICONDUCTOR JUNCTIONS AT ZERO-VOLTAGE

被引：2

作者：

MAGNEE, PHC ^{[1
]}

VANDERPOST, N ^{[1
]}

VANWEES, BJ ^{[1
]}

KLAPWIJK, TM ^{[1
]}

机构：

[1] UNIV GRONINGEN,CTR MAT SCI,9747 AG GRONINGEN,NETHERLANDS

来源：

PHYSICA B | 1994年 / 194卷 / pt 1期

关键词：

Superconducting materials;

D O I：

10.1016/0921-4526(94)90845-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An enhancement of the zero-voltage conductance of a niobium-silicon junction is found at very low temperatures. This enhancement is a result of quantum interference of electrons, near the superconductor semiconductor interface, which results in an increase of Andreev reflection probability.

引用

页码：1031 / 1032

页数：2

共 9 条

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