ULTRATHIN SILICON MEMBRANES TO STUDY SUPERCURRENT TRANSPORT IN CRYSTALLINE SEMICONDUCTORS

被引：13

作者：

VANHUFFELEN, WM ^{[1
]}

DEBOER, MJ ^{[1
]}

KLAPWIJK, TM ^{[1
]}

机构：

[1] STATE UNIV GRONINGEN, CTR MAT SCI, 9747 AG GRONINGEN, NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 21期

关键词：

D O I：

10.1063/1.104866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a two-step anisotropic etching process to fabricate thin silicon membranes, used to study supercurrent transport in semiconductor coupled weak links. The process uses a shallow BF2+ implantation, and permits easy control of membrane thickness less-than-or-equal-to 100 nm. Preliminary measurements on membrane-based Nb-Si-Nb junctions reveal the simultaneous occurrence of tunnel behavior and Josephson coupling.

引用

页码：2438 / 2440

页数：3

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