共 12 条
- [1] ADAMS AC, 1970, ELECTROCHEM SOC EXTE, P343
- [4] BUSEN KM, 1968, ELECTROCHEM TECH, V6, P257
- [5] USE OF LOW BARRIER POTENTIAL MATERIALS TO IMPROVE HIGH-FREQUENCY COUPLING TO JOSEPHSON TUNNEL-JUNCTIONS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1974, 9 (01): : 167 - 171
- [7] GIAVER I, 1969, J VAC SCI TECHNOL, V6, P502
- [9] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A713 - +
- [10] SETO J, 1974, 13 P INT C LOW TEMP