AN IMPROVED APPROACH TO ACCURATELY MODEL SHALLOW-B AND BF2 IMPLANTS IN SILICON

被引：68

作者：

TASCH, AF

SHIN, H

PARK, C

ALVIS, J

NOVAK, S

机构：

[1] MOTOROLA INC,AUSTIN,TX 78721

[2] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 03期

关键词：

D O I：

10.1149/1.2096748

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：810 / 814

页数：5

共 15 条

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[9] DETERMINATION OF LOW-DOSE BORON IMPLANTED CONCENTRATION PROFILES IN SILICON BY (N,ALPHA) REACTION
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ANDERLE, M
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : 777 - 780

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