BF2+ ION-IMPLANTATION IN SILICON - EFFECTS OF THE IN-FLIGHT DISSOCIATION

被引：8

作者：

QUEIROLO, G ^{[1
]}

BRESOLIN, C ^{[1
]}

MEDA, L ^{[1
]}

ANDERLE, M ^{[1
]}

CANTERI, R ^{[1
]}

机构：

[1] IRST,DIV SCI MAT,I-38050 POVO,ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 03期

关键词：

D O I：

10.1149/1.2095749

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：777 / 780

页数：4

共 12 条

[1] SHALLOW BORON-DOPED JUNCTIONS IN SILICON
COHEN, SS
NORTON, JF
KOCH, EF
WEISEL, GJ
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) : 1200 - 1213
[2] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS
DEARNALEY, G
FREEMAN, JH
GARD, GA
WILKINS, MA
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 587 - +
[3] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON
LIU, TM
OLDHAM, WG
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 59 - 62
[4] FURNACE AND RAPID THERMAL ANNEALING OF P+/N JUNCTIONS IN BF2+-IMPLANTED SILICON
LUNNON, ME
CHEN, JT
BAKER, JE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) : 2473 - 2475
[5] STRUCTURAL AND ELECTRICAL-PROPERTIES OF BF-2+ IMPLANTED, RAPID ANNEALED SILICON
LUNNON, ME
CHEN, JT
BAKER, JE
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1056 - 1058
[6] CURRENT EFFECTS IN BF2 IMPLANTS IN SILICON
QUEIROLO, G
CAPRARA, P
MEDA, L
OTTAVIANI, G
ANDERLE, M
BASSI, D
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 329 - 334
[7] LATTICE DAMAGE, BORON-DIFFUSION, AND DOPANT ACTIVATION IN BF2 IMPLANTED LAYERS
QUEIROLO, G
CAPRARA, P
MEDA, L
GUARESCHI, C
ANDERLE, M
OTTAVIANI, G
ARMIGLIATO, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (11) : 2905 - 2911
[8] RAPID THERMAL ANNEALING OF BF2+ IMPLANTED, PREAMORPHIZED SILICON
SEIDEL, TE
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 353 - 355
[9] ANOMALOUS BORON PROFILES PRODUCED BY BF2 IMPLANTATION INTO SILICON
SIGMON, TW
DELINE, VR
EVANS, CA
KATZ, WM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 981 - 982
[10] EMPIRICAL MODELING OF LOW-ENERGY BORON IMPLANTS IN SILICON
SIMARDNORMANDIN, M
SLABY, C
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2218 - 2223

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