STRUCTURAL AND ELECTRICAL-PROPERTIES OF BF-2+ IMPLANTED, RAPID ANNEALED SILICON

被引：16

作者：

LUNNON, ME ^{[1
]}

CHEN, JT ^{[1
]}

BAKER, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.95066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1056 / 1058

页数：3

相关论文

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[5] ANOMALOUS BORON PROFILES PRODUCED BY BF2 IMPLANTATION INTO SILICON
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[6] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+
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