CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON

被引：94

作者：

LIU, TM

OLDHAM, WG

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 03期

关键词：

D O I：

10.1109/EDL.1983.25647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：59 / 62

页数：4

共 11 条

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