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SIMULATION OF DOPING PROCESSES
被引:77
作者
:
RYSSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
RYSSEL, H
[
1
]
HABERGER, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
HABERGER, K
[
1
]
HOFFMANN, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
HOFFMANN, K
[
1
]
PRINKE, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
PRINKE, G
[
1
]
DUMCKE, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
DUMCKE, R
[
1
]
SACHS, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
SACHS, A
[
1
]
机构
:
[1]
UNIV MUNICH,INST NUMER MATH,D-8000 MUNICH 22,FED REP GER
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1980年
/ 27卷
/ 08期
关键词
:
D O I
:
10.1109/T-ED.1980.20061
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1484 / 1492
页数:9
相关论文
共 29 条
[1]
BORON IN NEAR-INTRINSIC (100) AND (111) SILICON UNDER INERT AND OXIDIZING AMBIENTS-DIFFUSION AND SEGREGATION
ANTONIADIS, DA
论文数:
0
引用数:
0
h-index:
0
ANTONIADIS, DA
GONZALEZ, AG
论文数:
0
引用数:
0
h-index:
0
GONZALEZ, AG
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
DUTTON, RW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(05)
: 813
-
819
[2]
OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON
ANTONIADIS, DA
论文数:
0
引用数:
0
h-index:
0
ANTONIADIS, DA
LIN, AM
论文数:
0
引用数:
0
h-index:
0
LIN, AM
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
DUTTON, RW
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(12)
: 1030
-
1033
[3]
MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS
ANTONIADIS, DA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
ANTONIADIS, DA
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
DUTTON, RW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 490
-
500
[4]
ANTONIADIS DA, 1978, 50192 STANF U TECH R
[5]
BIERSACK JP, UNPUBLISHED
[6]
KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION
BYLANDER, EG
论文数:
0
引用数:
0
h-index:
0
BYLANDER, EG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(12)
: 1171
-
1175
[7]
KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
DEAL, BE
HESS, DW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
HESS, DW
PLUMMER, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
PLUMMER, JD
HO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
HO, CP
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
: 339
-
346
[8]
FAIR RB, 1977, SEMICONDUCTOR SILICO, P968
[9]
Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1
[10]
EFFECT OF OXIDATION ON THE DIFFUSION OF PHOSPHORUS IN SILICON
FRANCIS, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
FRANCIS, R
DOBSON, PS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
DOBSON, PS
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
: 280
-
284
←
1
2
3
→
共 29 条
[1]
BORON IN NEAR-INTRINSIC (100) AND (111) SILICON UNDER INERT AND OXIDIZING AMBIENTS-DIFFUSION AND SEGREGATION
ANTONIADIS, DA
论文数:
0
引用数:
0
h-index:
0
ANTONIADIS, DA
GONZALEZ, AG
论文数:
0
引用数:
0
h-index:
0
GONZALEZ, AG
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
DUTTON, RW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(05)
: 813
-
819
[2]
OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON
ANTONIADIS, DA
论文数:
0
引用数:
0
h-index:
0
ANTONIADIS, DA
LIN, AM
论文数:
0
引用数:
0
h-index:
0
LIN, AM
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
DUTTON, RW
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(12)
: 1030
-
1033
[3]
MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS
ANTONIADIS, DA
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
ANTONIADIS, DA
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
DUTTON, RW
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 490
-
500
[4]
ANTONIADIS DA, 1978, 50192 STANF U TECH R
[5]
BIERSACK JP, UNPUBLISHED
[6]
KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION
BYLANDER, EG
论文数:
0
引用数:
0
h-index:
0
BYLANDER, EG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(12)
: 1171
-
1175
[7]
KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
DEAL, BE
HESS, DW
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
HESS, DW
PLUMMER, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
PLUMMER, JD
HO, CP
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
HO, CP
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
: 339
-
346
[8]
FAIR RB, 1977, SEMICONDUCTOR SILICO, P968
[9]
Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1
[10]
EFFECT OF OXIDATION ON THE DIFFUSION OF PHOSPHORUS IN SILICON
FRANCIS, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
FRANCIS, R
DOBSON, PS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
DOBSON, PS
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(01)
: 280
-
284
←
1
2
3
→