KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES

被引：51

作者：

DEAL, BE ^{[1
]}

HESS, DW ^{[1
]}

PLUMMER, JD ^{[1
]}

HO, CP ^{[1
]}

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 02期

关键词：

D O I：

10.1149/1.2131442

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：339 / 346

页数：8

共 15 条

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[3]

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DEAL, BE .

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[5] KINETICS OF THERMAL OXIDATION OF SILICON IN O2-N2 MIXTURES AT 1200 DEGREESC [J].

HESS, DW ;

DEAL, BE .

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[6] KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON [J].

HIRABAYA.K ;

IWAMURA, J .

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[7] SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA [J].

IRENE, EA ;

VANDERMEULEN, YJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) :1380-1384

[8]

IRENE EA, 1977, SEMICONDUCTOR SILICO, V77, P313

[9]

KRIEGLER RJ, 1973, DENKI KAGAKU, V41, P466

[10] EFFECT OF CRYSTAL ORIENTATION ON OXIDATION RATES OF SILICON IN HIGH PRESSURE STEAM [J].

LIGENZA, JR .

JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (11) :2011-&

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