KINETICS OF THERMAL OXIDATION OF SILICON IN O2-N2 MIXTURES AT 1200 DEGREESC

被引：23

作者：

HESS, DW ^{[1
]}

DEAL, BE ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 04期

关键词：

D O I：

10.1149/1.2134264

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：579 / 581

页数：3

共 10 条

[1] FORMATION OF 20-25A THERMAL OXIDE FILMS ON SILICON AT 950 DEGREES-1140 DEGREES C [J].

ABOAF, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) :1370-&

[2]

BURKHARDT PJ, 1966, T METALL SOC AIME, V236, P299

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[4] FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON [J].

FEHLNER, FP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) :1723-+

[5]

FLINT PS, 1962, MAY EL SOC M LOS ANG

[6] THIN TUNNELABLE LAYERS OF SILICON DIOXIDE FORMED BY OXIDATION OF SILICON [J].

GOODMAN, AM ;

BREECE, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :982-&

[7] OXIDATION OF SILICON AT HIGH TEMPERATURES AND LOW PRESSURE UNDER FLOW CONDITIONS AND VAPOR PRESSURE OF SILICON [J].

GULBRANSEN, EA ;

ANDREW, KF ;

BRASSART, FA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) :834-+

[8] KINETICS AND MECHANISM OF THERMAL OXIDATION OF SILICON WITH SPECIAL EMPHASIS ON IMPURITY EFFECTS [J].

REVESZ, AG ;

EVANS, RJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (03) :551-+

[9] OXIDATION OF N-TYPE SILICON IN 10-1400-A OXIDE THICKNESS RANGE [J].

SMITH, T ;

CARLAN, AJ .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2455-&

[10]

VANDERME.YJ, 1972, J ELECTROCHEM SOC, V119, P530

← 1 →