THIN TUNNELABLE LAYERS OF SILICON DIOXIDE FORMED BY OXIDATION OF SILICON

被引：76

作者：

GOODMAN, AM

BREECE, JM

机构：

来源：

关键词：

D O I：

10.1149/1.2407703

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：982 / &

共 21 条

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