FORMATION OF ULTRATHIN OXIDE-FILMS ON SILICON

被引：59

作者：

FEHLNER, FP

机构：

来源：

关键词：

D O I：

10.1149/1.2404087

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1723 / +

页数：1

共 32 条

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[6] CABRERA N, 1949, PHILOS MAG, V40, P175
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[8] MIGRATION OF METAL AND OXYGEN DURING ANODIC FILM FORMATION
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[9] Fehlner F. P., 1970, OXID MET, V2, P59
[10] METAL-NITRIDE-OXIDE-SILICON(MNOS) TRANSISTOR - CHARACTERISTICS AND APPLICATIONS
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