OXIDATION OF N-TYPE SILICON IN 10-1400-A OXIDE THICKNESS RANGE

被引：28

作者：

SMITH, T

CARLAN, AJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 05期

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D O I：

10.1063/1.1661526

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：2455 / &

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