CHANNELING AND DECHANNELING OF ION-IMPLANTED PHOSPHORUS IN SILICON

被引：39

作者：

REDDI, VGK ^{[1
]}

SANSBURY, JD ^{[1
]}

机构：

[1] FAIRCHILD CAMERA & INST CORP,RES & DEV LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 07期

关键词：

D O I：

10.1063/1.1662689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2951 / 2963

页数：13

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