FURNACE AND RAPID THERMAL ANNEALING OF P+/N JUNCTIONS IN BF2+-IMPLANTED SILICON

被引：31

作者：

LUNNON, ME ^{[1
]}

CHEN, JT ^{[1
]}

BAKER, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 10期

关键词：

BORON FLUORIDE - IMPLANT DAMAGE - RAPID THERMAL ANNEALING - SINGLE-CRYSTAL WAFERS;

D O I：

10.1149/1.2113602

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2473 / 2475

页数：3

相关论文

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