BORON, FLUORINE, AND CARRIER PROFILES FOR B AND BF2 IMPLANTS INTO CRYSTALLINE AND AMORPHOUS SI

被引：172

作者：

WILSON, RG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 12期

关键词：

D O I：

10.1063/1.331993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6879 / 6889

页数：11

共 9 条

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[2] FACTORS INFLUENCING THE FORMATION AND GROWTH OF FAULTED LOOPS IN BF2+-IMPLANTED SILICON [J].

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[3] SHEET RESISTIVITY AND TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATIONS OF BF2+-IMPLANTED SILICON [J].

CHEN, LJ ;

WU, IW .

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[4]

MULLER H, 1971, ION IMPLANTATION SEM, P85

[5] ANOMALOUS MIGRATION OF FLUORINE AND ELECTRICAL ACTIVATION OF BORON IN BF-2+-IMPLANTED SILICON [J].

TSAI, MY ;

STREETMAN, BG ;

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EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :144-147

[6] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+ [J].

TSAI, MY ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :183-187

[7] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .2. MIGRATION OF FLUORINE IN BF2+-IMPLANTED SILICON [J].

TSAI, MY ;

DAY, DS ;

STREETMAN, BG ;

WILLIAMS, P ;

EVANS, CA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :188-192

[8]

WILSON RG, 1978, NBS40049 SPEC PUBL

[9]

WILSON RG, 1982, NBS40071 SPEC PUBL

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