FACTORS INFLUENCING THE FORMATION AND GROWTH OF FAULTED LOOPS IN BF2+-IMPLANTED SILICON

被引：15

作者：

CHEN, LJ ^{[1
]}

WU, YJ ^{[1
]}

WU, IW ^{[1
]}

机构：

[1] NATL TSINGHUA UNIV,DEPT MAT SCI & ENGN,HSINCHU,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 05期

关键词：

D O I：

10.1063/1.329131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3520 / 3527

页数：8

共 16 条

[1] DIFFUSION PIPES IN SILICON NPN STRUCTURES [J].

BARSON, F ;

HESS, MS ;

ROY, MM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) :304-&

[2] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J].

BOOKER, GR ;

TUNSTALL, WJ .

PHILOSOPHICAL MAGAZINE, 1966, 13 (121) :71-&

[3]

BOOKER GR, 1969, PHILOS MAG, V11, P1303

[4]

CHEN LJ, 1979, 37TH P ANN M EL MICR, P694

[5] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS [J].

DRUM, CM ;

VANGELDE.W .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) :4465-&

[6] MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON [J].

MAHAJAN, S ;

ROZGONYI, GA ;

BRASEN, D .

APPLIED PHYSICS LETTERS, 1977, 30 (02) :73-75

[7] ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES [J].

PRUSSIN, S .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1635-1642

[8] MICROPLASMA BREAKDOWN AT STAIR-ROD DISLOCATIONS IN SILICON [J].

QUEISSER, HJ ;

GOETZBERGER, A .

PHILOSOPHICAL MAGAZINE, 1963, 8 (90) :1063-&

[9] GROWTH OF LATTICE DEFECTS IN SILICON DURING OXIDATION [J].

QUEISSER, HJ ;

VANLOON, PGG .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) :3066-&

[10] OXIDATION-INDUCED STACKING-FAULTS IN SILICON .1. NUCLEATION PHENOMENON [J].

RAVI, KV ;

VARKER, CJ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :263-271

← 1 2 →