MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON

被引：89

作者：

MAHAJAN, S ^{[1
]}

ROZGONYI, GA ^{[1
]}

BRASEN, D ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 02期

关键词：

D O I：

10.1063/1.89292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：73 / 75

页数：3

共 25 条

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