OXIDATION STACKING-FAULTS IN EPITAXIAL SILICON-CRYSTALS

[1] DIFFUSION PIPES IN SILICON NPN STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 304 - &

[2] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (121): : 71 - &

[3] CONTI M, 1974, IEEE J SOL STAT CIRC, VSC 9, P124

[4] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) : 4465 - &

[5] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3148 - &

[6] FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1056

[7] METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 890 - +

[8] X-RAY OBSERVATIONS OF LATTICE DEFECTS IN PARTICULAR, STACKING FAULTS IN NEIGHBOURHOOD OF A TWIN BOUNDARY IN SILICON SINGLE CRYSTALS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (06) : 1041 - &

[9] STACKING FAULTS IN ANNEALED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 360 - &

[10] SILICON SELF-DIFFUSION - (CZOCHRALSKI SINGLE CRYSTAL - SI31 - TEMPERATURE DEPENDENCE - ACTIVATION ENERGY 118.5 KCAL/MOLE - 1100 TO 1300 DEGREES C - E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (11) : 280 - +

[1] DIFFUSION PIPES IN SILICON NPN STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 304 - &

[2] DIFFRACTION CONTRAST ANALYSIS OF 2-DIMENSIONAL DEFECTS PRESENT IN SILICON AFTER ANNEALING [J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (121): : 71 - &

[3] CONTI M, 1974, IEEE J SOL STAT CIRC, VSC 9, P124

[4] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) : 4465 - &

[5] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3148 - &

[6] FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1056

[7] METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 890 - +

[8] X-RAY OBSERVATIONS OF LATTICE DEFECTS IN PARTICULAR, STACKING FAULTS IN NEIGHBOURHOOD OF A TWIN BOUNDARY IN SILICON SINGLE CRYSTALS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (06) : 1041 - &

[9] STACKING FAULTS IN ANNEALED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 360 - &

[10] SILICON SELF-DIFFUSION - (CZOCHRALSKI SINGLE CRYSTAL - SI31 - TEMPERATURE DEPENDENCE - ACTIVATION ENERGY 118.5 KCAL/MOLE - 1100 TO 1300 DEGREES C - E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (11) : 280 - +