FORMATION AND NATURE OF SWIRL DEFECTS IN SILICON

被引：164

作者：

FOLL, H

KOLBESEN, BO

机构：

[1] MAX PLANCK INST MET FORSCH,INST PHYS,D-7000 STUTTGART,FED REP GER

[2] SIEMENS AG,POB 460705,D-8000 MUNICH,FED REP GER

来源：

APPLIED PHYSICS | 1975年 / 8卷 / 04期

关键词：

D O I：

10.1007/BF00898366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：319 / 331

页数：13

共 39 条

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[8] EFFECT OF GROWTH PARAMETERS ON FORMATION AND ELIMINATION OF VACANCY CLUSTERS IN DISLOCATION-FREE SILICON-CRYSTALS [J].

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[9]

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[10]

Foll H., 1975, Lattice Defects in Semiconductors, 1974, P233

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