ELECTRON MICROSCOPIC OBSERVATIONS OF SIO2 PRECIPITATES AT DISLOCATIONS IN SILICON

The precipitation of oxygen from silicon single crystals has been examined. It has been found that oxygen precipitates are formed preferentially at dislocations. This finding enabled the formation of zones with high particle density and with large particles, which aided identification. It was then shown that the precipitates consisted of crystalline α- and β-SiO2 grown in a manner partially coherent with the Si lattice. Some of the precipitates are hexagonal prisms with the longitudinal axis in the 〈110〉 direction of the Si-matrix. © 1969 Chapman and Hall.