NUCLEATION AND GROWTH OF STACKING-FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATION

被引：29

作者：

HSIEH, CM

MAHER, DM

机构：

[1] BELL LABS,READING,PA 19604

[2] BELL LABS,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.1662344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1302 / 1306

页数：5

共 16 条

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[2] 2-DIMENSIONAL DEFECTS IN SILICON AFTER ANNEALING IN WET OXYGEN
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[4] DRUM CM, 1970, FALL EL SOC M
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[6] HIRTH JP, 1968, THEORY DISLOCATIONS, P484
[7] HSIEH C, UNPUBLISHED
[8] EXTRINSIC STACKING FAULTS IN SILICON AFTER HEATING IN WET OXYGEN
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[J]. APPLIED PHYSICS LETTERS, 1966, 8 (01) : 29 - +
[9] STACKING FAULTS IN ANNEALED SILICON SURFACES
LAWRENCE, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 360 - &
[10] MAYER A, 1970, RCA REV, V31, P414