DUAL ION-IMPLANTATION TECHNIQUE FOR FORMATION OF SHALLOW P+-N JUNCTIONS IN SILICON

被引：56

作者：

TSAUR, BY

ANDERSON, CH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 11期

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D O I：

10.1063/1.331908

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：6336 / 6339

页数：4

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