SHORT-CHANNEL MOSFETS FABRICATED USING CW ND - YAG LASER ANNEALING OF AS-IMPLANTED SOURCE AND DRAIN

被引:1
作者
YOSHIDA, M
OKABAYASHI, H
ISHIDA, K
机构
关键词
D O I
10.1143/JJAP.20.2121
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2121 / 2126
页数:6
相关论文
共 12 条
  • [1] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS
    FURUKAWA, S
    ISHIWARA, H
    MATSUMURA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) : 134 - +
  • [2] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
    GAT, A
    GIBBONS, JF
    MAGEE, TJ
    PENG, J
    DELINE, VR
    WILLIAMS, P
    EVANS, CA
    [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278
  • [3] LATTICE-DEFECTS IN AS-IMPLANTED AND CW ND-YAG LASER-ANNEALED SILICON
    ISHIDA, K
    OKABAYASHI, H
    YOSHIDA, M
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 175 - 177
  • [4] SHORT-CHANNEL MOS FETS FABRICATED BY SELF-ALIGNED ION-IMPLANTATION AND LASER ANNEALING
    KOYANAGI, M
    TAMURA, H
    MIYAO, M
    HASHIMOTO, N
    TOKUYAMA, T
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 621 - 623
  • [5] SCANNING-ELECTRON-BEAM ANNEALING OF ION-IMPLANTED P-N-JUNCTION DIODES
    MCMAHON, RA
    AHMED, H
    SPEIGHT, JD
    DOBSON, RM
    [J]. ELECTRONICS LETTERS, 1979, 15 (14) : 433 - 435
  • [6] NAGASAWA E, 1980, NEC RES DEV, V59, P1
  • [7] COMPUTER-AIDED SI-MOSFET PROCESS DESIGNING
    OHNO, Y
    OKUTO, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 65 - 69
  • [8] SIO2 ANTIREFLECTION COATING EFFECT ON CW LASER ANNEALING OF ION-IMPLANTED SI
    OKABAYASHI, H
    YOSHIDA, M
    ISHIDA, K
    YAMANE, T
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 202 - 203
  • [9] SZE SM, 1969, PHYSICS SEMICONDUCTO, P517
  • [10] SHORT-CHANNEL POLYSILICON-GATE MOSFETS FABRICATED BY CW ARGON-LASER ANNEALING OF ARSENIC-IMPLANTED SOURCE AND DRAIN
    TENG, TC
    MERRITT, JD
    VELEZ, J
    PENG, J
    PALKUTI, L
    [J]. ELECTRONICS LETTERS, 1980, 16 (12) : 477 - 478