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SHORT-CHANNEL MOSFETS FABRICATED USING CW ND - YAG LASER ANNEALING OF AS-IMPLANTED SOURCE AND DRAIN
被引:1
作者
:
YOSHIDA, M
论文数:
0
引用数:
0
h-index:
0
YOSHIDA, M
OKABAYASHI, H
论文数:
0
引用数:
0
h-index:
0
OKABAYASHI, H
ISHIDA, K
论文数:
0
引用数:
0
h-index:
0
ISHIDA, K
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1981年
/ 20卷
/ 11期
关键词
:
D O I
:
10.1143/JJAP.20.2121
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2121 / 2126
页数:6
相关论文
共 12 条
[1]
THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS
FURUKAWA, S
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, S
ISHIWARA, H
论文数:
0
引用数:
0
h-index:
0
ISHIWARA, H
MATSUMURA, H
论文数:
0
引用数:
0
h-index:
0
MATSUMURA, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1972,
11
(02)
: 134
-
+
[2]
PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
GAT, A
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
GAT, A
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
GIBBONS, JF
MAGEE, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
MAGEE, TJ
PENG, J
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
PENG, J
DELINE, VR
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
DELINE, VR
WILLIAMS, P
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
WILLIAMS, P
EVANS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
EVANS, CA
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(05)
: 276
-
278
[3]
LATTICE-DEFECTS IN AS-IMPLANTED AND CW ND-YAG LASER-ANNEALED SILICON
ISHIDA, K
论文数:
0
引用数:
0
h-index:
0
ISHIDA, K
OKABAYASHI, H
论文数:
0
引用数:
0
h-index:
0
OKABAYASHI, H
YOSHIDA, M
论文数:
0
引用数:
0
h-index:
0
YOSHIDA, M
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(02)
: 175
-
177
[4]
SHORT-CHANNEL MOS FETS FABRICATED BY SELF-ALIGNED ION-IMPLANTATION AND LASER ANNEALING
KOYANAGI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Kokubunji
KOYANAGI, M
TAMURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Kokubunji
TAMURA, H
MIYAO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Kokubunji
MIYAO, M
HASHIMOTO, N
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Kokubunji
HASHIMOTO, N
TOKUYAMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Kokubunji
TOKUYAMA, T
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(08)
: 621
-
623
[5]
SCANNING-ELECTRON-BEAM ANNEALING OF ION-IMPLANTED P-N-JUNCTION DIODES
MCMAHON, RA
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES CTR,IPSWICH,ENGLAND
PO RES CTR,IPSWICH,ENGLAND
MCMAHON, RA
AHMED, H
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES CTR,IPSWICH,ENGLAND
PO RES CTR,IPSWICH,ENGLAND
AHMED, H
SPEIGHT, JD
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES CTR,IPSWICH,ENGLAND
PO RES CTR,IPSWICH,ENGLAND
SPEIGHT, JD
DOBSON, RM
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES CTR,IPSWICH,ENGLAND
PO RES CTR,IPSWICH,ENGLAND
DOBSON, RM
[J].
ELECTRONICS LETTERS,
1979,
15
(14)
: 433
-
435
[6]
NAGASAWA E, 1980, NEC RES DEV, V59, P1
[7]
COMPUTER-AIDED SI-MOSFET PROCESS DESIGNING
OHNO, Y
论文数:
0
引用数:
0
h-index:
0
OHNO, Y
OKUTO, Y
论文数:
0
引用数:
0
h-index:
0
OKUTO, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
: 65
-
69
[8]
SIO2 ANTIREFLECTION COATING EFFECT ON CW LASER ANNEALING OF ION-IMPLANTED SI
OKABAYASHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
OKABAYASHI, H
YOSHIDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
YOSHIDA, M
ISHIDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
ISHIDA, K
YAMANE, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
YAMANE, T
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(03)
: 202
-
203
[9]
SZE SM, 1969, PHYSICS SEMICONDUCTO, P517
[10]
SHORT-CHANNEL POLYSILICON-GATE MOSFETS FABRICATED BY CW ARGON-LASER ANNEALING OF ARSENIC-IMPLANTED SOURCE AND DRAIN
TENG, TC
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,SUNNYVALE,CA 94086
TENG, TC
MERRITT, JD
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,SUNNYVALE,CA 94086
MERRITT, JD
VELEZ, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,SUNNYVALE,CA 94086
VELEZ, J
PENG, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,SUNNYVALE,CA 94086
PENG, J
PALKUTI, L
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,SUNNYVALE,CA 94086
PALKUTI, L
[J].
ELECTRONICS LETTERS,
1980,
16
(12)
: 477
-
478
←
1
2
→
共 12 条
[1]
THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS
FURUKAWA, S
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, S
ISHIWARA, H
论文数:
0
引用数:
0
h-index:
0
ISHIWARA, H
MATSUMURA, H
论文数:
0
引用数:
0
h-index:
0
MATSUMURA, H
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1972,
11
(02)
: 134
-
+
[2]
PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
GAT, A
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
GAT, A
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
GIBBONS, JF
MAGEE, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
MAGEE, TJ
PENG, J
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
PENG, J
DELINE, VR
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
DELINE, VR
WILLIAMS, P
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
WILLIAMS, P
EVANS, CA
论文数:
0
引用数:
0
h-index:
0
机构:
ADVANCED RES & APPLICAT CORP,SUNNYVALE,CA 94086
EVANS, CA
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(05)
: 276
-
278
[3]
LATTICE-DEFECTS IN AS-IMPLANTED AND CW ND-YAG LASER-ANNEALED SILICON
ISHIDA, K
论文数:
0
引用数:
0
h-index:
0
ISHIDA, K
OKABAYASHI, H
论文数:
0
引用数:
0
h-index:
0
OKABAYASHI, H
YOSHIDA, M
论文数:
0
引用数:
0
h-index:
0
YOSHIDA, M
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(02)
: 175
-
177
[4]
SHORT-CHANNEL MOS FETS FABRICATED BY SELF-ALIGNED ION-IMPLANTATION AND LASER ANNEALING
KOYANAGI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Kokubunji
KOYANAGI, M
TAMURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Kokubunji
TAMURA, H
MIYAO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Kokubunji
MIYAO, M
HASHIMOTO, N
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Kokubunji
HASHIMOTO, N
TOKUYAMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi Ltd., Kokubunji
TOKUYAMA, T
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(08)
: 621
-
623
[5]
SCANNING-ELECTRON-BEAM ANNEALING OF ION-IMPLANTED P-N-JUNCTION DIODES
MCMAHON, RA
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES CTR,IPSWICH,ENGLAND
PO RES CTR,IPSWICH,ENGLAND
MCMAHON, RA
AHMED, H
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES CTR,IPSWICH,ENGLAND
PO RES CTR,IPSWICH,ENGLAND
AHMED, H
SPEIGHT, JD
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES CTR,IPSWICH,ENGLAND
PO RES CTR,IPSWICH,ENGLAND
SPEIGHT, JD
DOBSON, RM
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES CTR,IPSWICH,ENGLAND
PO RES CTR,IPSWICH,ENGLAND
DOBSON, RM
[J].
ELECTRONICS LETTERS,
1979,
15
(14)
: 433
-
435
[6]
NAGASAWA E, 1980, NEC RES DEV, V59, P1
[7]
COMPUTER-AIDED SI-MOSFET PROCESS DESIGNING
OHNO, Y
论文数:
0
引用数:
0
h-index:
0
OHNO, Y
OKUTO, Y
论文数:
0
引用数:
0
h-index:
0
OKUTO, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
: 65
-
69
[8]
SIO2 ANTIREFLECTION COATING EFFECT ON CW LASER ANNEALING OF ION-IMPLANTED SI
OKABAYASHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
OKABAYASHI, H
YOSHIDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
YOSHIDA, M
ISHIDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
ISHIDA, K
YAMANE, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN
YAMANE, T
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(03)
: 202
-
203
[9]
SZE SM, 1969, PHYSICS SEMICONDUCTO, P517
[10]
SHORT-CHANNEL POLYSILICON-GATE MOSFETS FABRICATED BY CW ARGON-LASER ANNEALING OF ARSENIC-IMPLANTED SOURCE AND DRAIN
TENG, TC
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,SUNNYVALE,CA 94086
TENG, TC
MERRITT, JD
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,SUNNYVALE,CA 94086
MERRITT, JD
VELEZ, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,SUNNYVALE,CA 94086
VELEZ, J
PENG, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,SUNNYVALE,CA 94086
PENG, J
PALKUTI, L
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,SUNNYVALE,CA 94086
PALKUTI, L
[J].
ELECTRONICS LETTERS,
1980,
16
(12)
: 477
-
478
←
1
2
→