SCANNING-ELECTRON-BEAM ANNEALING OF ION-IMPLANTED P-N-JUNCTION DIODES

被引：7

作者：

MCMAHON, RA ^{[1
]}

AHMED, H ^{[1
]}

SPEIGHT, JD ^{[1
]}

DOBSON, RM ^{[1
]}

机构：

[1] PO RES CTR,IPSWICH,ENGLAND

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 14期

关键词：

Annealing; Diodes; Electron beams; Silicon;

D O I：

10.1049/el:19790311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scanning-electron-beam annealing of ion-implanted silicon p+-n junctions over a range of beam power and exposure conditions is described. Electrical measurements have shown that electron-beam annealing can produce diode characteristics close to those of similar thermally annealed structures. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：433 / 435

页数：3

共 8 条

[1] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
GAT, A
GIBBONS, JF
MAGEE, TJ
PENG, J
DELINE, VR
WILLIAMS, P
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278
[2] DEPLETION-LAYER CAPACITANCE OF P+N STEP JUNCTIONS
GUMMEL, HK
SCHARFET.DL
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (05) : 2148 - &
[3] KIRKPATRICK AR, 1978, MAY SPR M ECS SEATTL
[4] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON
MCMAHON, RA
AHMED, H
[J]. ELECTRONICS LETTERS, 1979, 15 (02) : 45 - 47
[5] MILLER GL, 1978, P C SEMICONDUCTOR CH, P502
[6] SCANNING-ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON
REGOLINI, JL
GIBBONS, JF
SIGMON, TW
PEASE, RFW
MAGEE, TJ
PENG, J
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (06) : 410 - 412
[7] SZE SM, 1969, PHYSICS SEMICONDUCTO, P77
[8] YOUNG RT, 1978, P TOPICAL C CHARACTE, P466

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