LATTICE-DEFECTS IN AS-IMPLANTED AND CW ND-YAG LASER-ANNEALED SILICON

被引：10

作者：

ISHIDA, K

OKABAYASHI, H

YOSHIDA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 02期

关键词：

D O I：

10.1063/1.91814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：175 / 177

页数：3

共 14 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[3] STUDY OF THE MECHANISM OF CW LASER ANNEALING OF ARSENIC-IMPLANTED SILICON [J].

GAT, A ;

LIETOILA, A ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2926-2929

[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

DELINE, VR ;

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[5] USE OF A SCANNING CW KR LASER TO OBTAIN DIFFUSION-FREE ANNEALING OF B-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

WILLIAMS, P ;

DELINE, V ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :389-391

[6] COMPARATIVE-STUDY OF LASER AND THERMAL ANNEALING OF BORON-IMPLANTED SILICON [J].

NARAYAN, J ;

YOUNG, RT ;

WHITE, CW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3912-3917

[7] SIO2 ANTIREFLECTION COATING EFFECT ON CW LASER ANNEALING OF ION-IMPLANTED SI [J].

OKABAYASHI, H ;

YOSHIDA, M ;

ISHIDA, K ;

YAMANE, T .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :202-203

[8]

ROZGONYI GA, 1975, LASER SOLID INTERACT, P457

[9] OXIDATION, DEFECTS AND VACANCY DIFFUSION IN SILICON [J].

SANDERS, IR ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1969, 20 (167) :881-&

[10] SHRINKAGE AND ANNIHILATION OF STACKING-FAULTS IN SILICON [J].

SUGITA, Y ;

SHIMIZU, H ;

YOSHINAKA, A ;

AOSHIMA, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :44-46

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