SIO2 ANTIREFLECTION COATING EFFECT ON CW LASER ANNEALING OF ION-IMPLANTED SI

被引：4

作者：

OKABAYASHI, H ^{[1
]}

YOSHIDA, M ^{[1
]}

ISHIDA, K ^{[1
]}

YAMANE, T ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,DIV LASER EQUIPMENT DEV,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

关键词：

D O I：

10.1063/1.91424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：202 / 203

页数：2

共 10 条

[1] Carslaw H. S., 1959, CONDUCTION HEAT SOLI, V2, P264
[2] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
GAT, A
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MAGEE, TJ
PENG, J
DELINE, VR
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EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278
[3] USE OF A SCANNING CW KR LASER TO OBTAIN DIFFUSION-FREE ANNEALING OF B-IMPLANTED SILICON
GAT, A
GIBBONS, JF
MAGEE, TJ
PENG, J
WILLIAMS, P
DELINE, V
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 389 - 391
[4] HASS G, 1964, PHYSICS THIN FILMS, V2, P203
[5] HILL C, 1979, LASER SOLID INTERACT, P419
[6] KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128
[7] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE
LAX, M
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 786 - 788
[8] LASER ANNEALING FOR SOLID-PHASE THIN-FILM REACTIONS
LIAU, ZL
TSAUR, BY
MAYER, JW
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 221 - 223
[9] MIYAO M, 1979, LASER SOLID INTERACT, P325
[10] SOLID-PHASE EPITAXY OF IMPLANTED SILICON BY CW AR ION LASER IRRADIATION
WILLIAMS, JS
BROWN, WL
LEAMY, HJ
POATE, JM
RODGERS, JW
ROUSSEAU, D
ROZGONYI, GA
SHELNUTT, JA
SHENG, TT
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 542 - 544