SHORT-CHANNEL MOS FETS FABRICATED BY SELF-ALIGNED ION-IMPLANTATION AND LASER ANNEALING

被引：11

作者：

KOYANAGI, M

TAMURA, H

MIYAO, M

HASHIMOTO, N

TOKUYAMA, T

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 08期

关键词：

D O I：

10.1063/1.91229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Short-channel MOS FET's are successfully fabricated using Q-switched ruby laser irradiation on As-implanted sources and drains. Implantation and laser irradiation are both self-aligned by the polysilicon gate electrodes. The threshold-voltage-vs-channel-length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.

引用

页码：621 / 623

页数：3

共 8 条

[1] EVANS CA, 1978, APPL PHYS LETT, V32, P276
[2] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
GAT, A
GIBBONS, JF
MAGEE, TJ
PENG, J
DELINE, VR
WILLIAMS, P
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278
[3] KOYANAGI M, UNPUBLISHED
[4] P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION
NARAYAN, J
YOUNG, RT
WOOD, RF
CHRISTIE, WH
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 338 - 340
[5] SEIDEL TE, 1978, P ELECTROCHEMICAL SO, V78, P517
[6] VENKATESAN TNC, 1978, APPL PHYS LETT, V33, P662
[7] WHITE CW, 1978, APPL PHYS LETT, V32, P276
[8] LASER ANNEALING OF BORON-IMPLANTED SILICON
YOUNG, RT
WHITE, CW
CLARK, GJ
NARAYAN, J
CHRISTIE, WH
MURAKAMI, M
KING, PW
KRAMER, SD
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 139 - 141

← 1 →