CURRENT EFFECTS IN BF2 IMPLANTS IN SILICON

被引：7

作者：

QUEIROLO, G

CAPRARA, P

MEDA, L

OTTAVIANI, G

ANDERLE, M

BASSI, D

机构：

[1] IST FIS, I-41100 MODENA, ITALY

[2] IST RIC SCI & TECHNOL, DIV SCI MAT, I-38050 POVO, ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80067-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：329 / 334

页数：6

相关论文

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